Lifetime degradation mechanism in boron-doped Czochralski silicon

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

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Boron-oxygen defect imaging in p-type Czochralski silicon

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

The effect of Fe-Ga pair defects on minority-carrier lifetime τ in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deeplevel transient spectroscopy and annealing studies. The typical τ of Fe-Ga co-doped crystals (0.4 μs) was dramatically lower than τ of crystals doped with similar amounts of either Fe alone (12 μs) or Ga alone (1,400 μs), contra...

Degradation of oxide-passivated boron-diffused silicon

Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in 120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degrada...